A Review of CMOS Image Sensor Pixel Structure Research

Abstract

A CMOS image sensor (CIS) comprises millions of independent micro-units—known as pixel units—that convert light signals into electrical signals. Whilst its structure evolves rapidly, its adaptability remains relatively limited when faced with certain extreme conditions. Today, the primary question is what approach should be taken in future research to enable pixel structure to deliver better performance. This paper summarized current technologies by examining cutting-edge pixel structure designs and their technical evolution, whilst also forecasting future technological development trends. Through research methods such as product and technology comparisons, analysis of the drivers of technological evolution, and exploration of the gap between technical limits and physical limits, the paper identifies the technical bottlenecks and applicable scenarios for different structures, and proposes future research directions based on AI-driven collaborative improvement and quantum dot integration.