A Review of Reliability in Wide-Bandgap Semiconductor Power Devices for Power Electronics

Abstract

Wide bandgap semiconductor power devices, represented by SiC and GaN, have become the core technology in the field of high-efficiency power conversion due to their their intrinsic advantages such as high breakdown field strength, high switching frequency and low conduction loss, making them widely applied in important fileds including new energy automobile, smart grids and humanoid robots. However, during engineering implementation, the devices encounter reliability bottlenecks. Current research has carried out targeted research and breakthroughs from dimensions including gate dielectric optimization, defect regulation, novel packaging design, condition monitoring and life prediction for wide bandgap semiconductor. Firstly, the original advantages and great difficulties of the Wide Bandgap Semiconductor Power Device are studied, as well as the common failure mechanisms. Then, evaluate the existing countermeasures to solve these problems. Finally, the future development path of the new generation power system is introduced.