A Review of Double Data Rate Synchronous Dynamic Random-Access Memory Evolution from the First to the Fifth Generation

Abstract

Double data rate (DDR) synchronous dynamic random access memory (SDRAM) solves the problem that the demand for faster data transfer rate is higher and higher, which SDRAM cannot solve. Because of the good balance between storage density, performance and manufacturing cost, DRAM has become the main technology of the main memory system. From the birth of DDR1 to DDR5 now, paper will comprehensively review the changes of DDR SDRAM technology. This paper systematically analyzes the process of DDR generation change by focusing on key performance indicators (such as operating voltage, data transmission rate and architecture improvement). Next, we will compare the fundamental changes of signaling and interface design, including the improvement of clocking and signal technology, the merger of on-die termination and the change of burst length. Finally, this study summarizes these trends and predicts the future direction of architecture. In particular, we will discuss the challenges of power efficiency, signal integrity, and the possibility of combining with the new in-memory computing technology in the new generation of memory systems.